NC Group — Wide-bandgap semiconductor device research at BUET

GaN Goes Analog: A 500 °C-Ready Operational Amplifier

Semiconductor Science and Technology

A New Gate Architecture for Linear GaN Power Amplifiers

IEEE Transactions on Electron Devices

Cracking the Contact Problem: Fermi-Level Pinning on p-Type GaN

Applied Physics Letters

Scaling Down GaN p-MOSFETs: The Physics Behind Better Performance

IEDM

The First Self-Aligned GaN p-FET: A Building Block for Complementary GaN

IEDM

GaN Meets Quantum: Cryogenic Transistors for Qubit Readout

Symposium on VLSI Technology, 2021

GaN Goes Analog: A 500 °C-Ready Operational Amplifier

Semiconductor Science and Technology

A New Gate Architecture for Linear GaN Power Amplifiers

IEEE Transactions on Electron Devices

Cracking the Contact Problem: Fermi-Level Pinning on p-Type GaN

Applied Physics Letters

Scaling Down GaN p-MOSFETs: The Physics Behind Better Performance

IEDM

The First Self-Aligned GaN p-FET: A Building Block for Complementary GaN

IEDM

GaN Meets Quantum: Cryogenic Transistors for Qubit Readout

Symposium on VLSI Technology, 2021

01 / RESEARCH

The physics of wide-bandgap devices, examined closely.

NC Group brings together device physics, modeling, simulation, and engineering to understand and advance next-generation semiconductor devices.

Explore all research

Fabrication

Process and materials development for AlGaN/GaN heterostructures and transistors—from Ohmic contact formation and regrowth to gate recess and field-plate engineering for RF and harsh-environment HEMTs.

Explore

Device Physics

Fundamental studies of carrier transport, trapping, and barrier effects in wide-bandgap devices, with emphasis on high-temperature, radiation-tolerant, and harsh-environment operation of GaN transistors.

Explore

AI at Hardware Design

Machine-learning-assisted inverse design and design-technology co-optimization (DTCO) for semiconductor devices and circuits, linking CAD automation with experimental device data.

Explore

Modeling & Simulation

Physics-based and TCAD modeling that connects material and interface properties to measured device behavior, including Fermi-level pinning, hole transport, and compact models for AlGaN/GaN HEMTs.

Explore

3D-IC

Heterogeneous and three-dimensional integration of wide-bandgap devices with advanced interconnects to improve electrical performance, thermal management, and system-level density.

Explore

Circuits

Monolithic GaN circuit design on silicon and native substrates, spanning operational amplifiers, logic, and integrated subsystems for RF, power conversion, and high-temperature applications.

Explore

02 / OUR TEAM

The people behind the research.

Our group is dedicated to advancing the field of Wide Bandgap (WBG) semiconductor technology, with a specific focus on Gallium Nitride (GaN) devices. We specialize in the development of GaN RF and power devices, leveraging the unique properties of GaN to create high-performance solutions.

Meet the whole team →

03 / SELECTED CONTRIBUTIONS

What the group has produced.

PUBLICATIONS

Peer-reviewed journal and conference papers on GaN devices and modeling.

Browse Publications

PATENTS & INNOVATIONS

Patents on device architecture for RF and power GaN.

View Patents

RECOGNITION

Best Paper recognition at a device physics workshop

2023

All awards

04 / NEWS

Recent activity.

JUL 2024

PUBLICATION

New results on vertical GaN power diodes accepted to IEEE EDL.

The group reports reduced dynamic on-resistance in vertical GaN diodes through buffer and termination engineering.

MAY 2024

EVENT

NC Group presents work on RF reliability at a device physics workshop.

MAR 2024

NEWS

The group welcomes new graduate researchers to the modeling effort.

JAN 2024

NEWS

An early version of our open compact-model library is shared for feedback.

05 / JOIN OUR TEAM

Curious aboutsemiconductor devices?

We welcome students, researchers, and collaborators interested in understanding semiconductor devices deeply and contributing to meaningful research.

Get in touch →

Wide-bandgap Semiconductor Device Research

GaN Goes Analog: A 500 °C-Ready Operational Amplifier

A New Gate Architecture for Linear GaN Power Amplifiers

Cracking the Contact Problem: Fermi-Level Pinning on p-Type GaN

Scaling Down GaN p-MOSFETs: The Physics Behind Better Performance

The First Self-Aligned GaN p-FET: A Building Block for Complementary GaN

GaN Meets Quantum: Cryogenic Transistors for Qubit Readout

GaN Goes Analog: A 500 °C-Ready Operational Amplifier

A New Gate Architecture for Linear GaN Power Amplifiers

Cracking the Contact Problem: Fermi-Level Pinning on p-Type GaN

Scaling Down GaN p-MOSFETs: The Physics Behind Better Performance

The First Self-Aligned GaN p-FET: A Building Block for Complementary GaN

GaN Meets Quantum: Cryogenic Transistors for Qubit Readout

The physics of wide-bandgap devices, examined closely.

The people behind the research.

What the group has produced.

Recent activity.

New results on vertical GaN power diodes accepted to IEEE EDL.

NC Group presents work on RF reliability at a device physics workshop.

The group welcomes new graduate researchers to the modeling effort.

An early version of our open compact-model library is shared for feedback.

Curious aboutsemiconductor devices?

Wide-bandgap Semiconductor Device Research

GaN Goes Analog: A 500 °C-Ready Operational Amplifier

A New Gate Architecture for Linear GaN Power Amplifiers

Cracking the Contact Problem: Fermi-Level Pinning on p-Type GaN

Scaling Down GaN p-MOSFETs: The Physics Behind Better Performance

The First Self-Aligned GaN p-FET: A Building Block for Complementary GaN

GaN Meets Quantum: Cryogenic Transistors for Qubit Readout

GaN Goes Analog: A 500 °C-Ready Operational Amplifier

A New Gate Architecture for Linear GaN Power Amplifiers

Cracking the Contact Problem: Fermi-Level Pinning on p-Type GaN

Scaling Down GaN p-MOSFETs: The Physics Behind Better Performance

The First Self-Aligned GaN p-FET: A Building Block for Complementary GaN

GaN Meets Quantum: Cryogenic Transistors for Qubit Readout

The physics of wide-bandgap devices, examined closely.

The people behind the research.

What the group has produced.

Recent activity.

New results on vertical GaN power diodes accepted to IEEE EDL.

NC Group presents work on RF reliability at a device physics workshop.

The group welcomes new graduate researchers to the modeling effort.

An early version of our open compact-model library is shared for feedback.

Curious aboutsemiconductor devices?